Proceedings: ISTFA, International Symposium for Testing and Failure Analysis

31st International Symposium Analysis November 6-10 backside bondpad capacitor cell characterization chip circuit CMOS contact resistance contamination copper corrosion cross-section damage defect deprocessing device dielectric dislocation dopant EBIC electrical emission etch failing Failure Analysis Failure Analysis November failure mechanism fault isolation Figure focused ion beam Freescale Semiconductor functional gate oxide identified input inspection integrated circuits interface ion beam IREM ISTFA laser laser stimulation leakage lock-in lock-in amplifier magnification material McEnery Convention Center measurements method microscopy mode NMOS node OBIRCH observed optical output package parameters pattern pixel probe region scan chain Scanning Electron Microscope semiconductor Shmoo plot shown in Fig shows signal silicide silicon simulation solder joints SRAM structure substrate surface Symposium for Testing technique temperature Testing and Failure thermal thickness tool transistor trench VCSEL voltage contrast wafer x-ray